Discretes 750W GaN on SiC RF transistor powers aviation systems

Discretes 750W GaN on SiC RF transistor powers aviation systems

2013/09/16

Microsemi has increased the power handling of its range of RF transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750W transistor.

The MDSGN-750ELMV transistor has 750W peak power with 17dB of power gain and typical 70% drain efficiency when operating at 1030/1090MHz.

“This represents the most power in one single-ended device of its type covering this band,” said Microsemi.

The RF device has been designed to handle the demanding commercial Mode-S ELM (Extended Length Message) pulsing conditions for both the 1030MHz ground based interrogators and 1090MHz airborne transponders and can be used in the output stage of high performance ground.

The importance of ELM to air traffic control systems is that it supports the communication of shared weather and air traffic situational awareness information to aircrafts within a regional locale. It is also used for use in commercial air-to-air traffic alert and collision avoidance systems (TCAS) and in IFF (Identify Friend or Foe) systems.

ELM pulsing format is burst of quantity 48 pulse – 32 us (ON) / 18 us (OFF) with a burst repetition period of 24 milliseconds.

The transistor’s drain bias voltage is +50V and breakdown voltage is greater than 200V.

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