LED Lighting Toshiba releases GaN-on-Si lighting LEDs

LED Lighting Toshiba releases GaN-on-Si lighting LEDs

2013/08/15

Toshiba’s GaN-on-Si LEDs are now available, giving an insight into what this cost-reducing technology is capable of.

“Designed for an operating temperature range from -40 up to +100°C, the 1W LEDs are ideally suited for general lighting applications, bulbs, ceiling lighting, street lights and floodlights,” said the firm.

Building the emissive GaN layers on a large silicon wafer is in principle cheaper than making them on the usual SiC or sapphire wafers, which are expensive wafers, and only available in smaller sizes.

However, lattice mismatch means multiple buffer layers are needed to grow GaN on Si, raising the spectre of wafer-bowing and yield-reducing dislocations without a lot of work layer growth.

The proof of the pudding is in the eating and, according to Toshiba’s data sheet, typical 25°C figures for its first warm white device, from the TL1F1 series as it will be known, (TL1F1-LW1) is 85 lm at 350mA (2.9V=1.0W) and 3,000K.

The 5,000K CRI=70 cool white (TL1F1-NW0) is said to deliver 112 lm typically at the same current and voltage.

85 lm/W is a credible figure for a warm while LED and 112 lm is credible for cool white.

Many LED companies are specifying their devices hot.

At 85°C ambient, from the data sheets, the figures are 80% (68 lm) and 85% (95.2 lm) respectively.

As forward voltage reduces with temperature (an amount not specified in the data), the lm/W figures will not drop so far.

Thermal resistance from the 6.4×5.0×1.35mm package is 8°C/W.

There is also a CRI=80 5,000K cool white (-NW0, 100 lm), and a 4,000K CRI=80min (-WH1, 95 lm).

TTI is stocking the TL1F1 LEDs in Europe.

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